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From: "Matthew L. Creech"
To: linux-mtd@lists.infradead.org
Subject: [PATCH 3/3] UBIFS FAQ: clarify NAND "disturb" errors
Date: Wed, 27 Jul 2011 00:32:56 -0400
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Signed-off-by: Matthew L. Creech
---
faq/ubifs.xml | 78 ++++++++++++++++++++++++++++++++++++--------------------
1 files changed, 50 insertions(+), 28 deletions(-)
diff --git a/faq/ubifs.xml b/faq/ubifs.xml
index 3348da4..bd91733 100644
--- a/faq/ubifs.xml
+++ b/faq/ubifs.xml
@@ -67,8 +67,10 @@ some specific aspects of MLC NAND flashes:
- MLC NAND flashes are more "faulty" than SLC, so they use stronger
- ECC codes which occupy whole OOB area; this is not a problem
- for UBI/UBIFS, because neither UBIFS nor UBI use OOB area;
+ ECC codes; these ECC codes often occupy whole OOB area (as do the
+ ECC codes on some newer SLC flashes, which are more error-prone than
+ previous generations of flash); this is not a problem for UBI/UBIFS,
+ because neither UBIFS nor UBI use OOB area;
- when the data are written to an eraseblock, they have to be written
sequentially, from the beginning of the eraseblock to the end of it;
@@ -80,22 +82,54 @@ some specific aspects of MLC NAND flashes:
uses deterministic wear-leveling algorithm
(see this section);
- - MLC flashes have so called "read-disturb" property, which means
- that NAND page read operation may introduce a permanent bit change; the
- ECC code would fix it, but more read operations may introduce more bit
- changes and soft ECC errors may turn into hard ECC errors; well, even
- SLC NAND flashes have this property, but the probability of bit changes
- is much lower in SLC NAND; however, this should not be a problem
- because UBI is doing scrubbing; in other words, once UBI notices that
- there is a correctable bit-flip in an eraseblock, it moves the contents
- of this physical eraseblock to a different physical eraseblocks, and
- re-maps corresponding logical eraseblocks to the new physical
- eraseblock; so UBI refreshes the data and gets rid of bit-flips, thus
- improving data integrity.
+ - MLC flashes exhibit bit flips as a result of "program disturb" and
+ "read disturb" errors (see
+ here).
+ Note that SLC flashes have these same errors, but they are much more
+ common on MLC:
+
+ - NAND flashes have a so called "read-disturb" property, which
+ means that a NAND page read operation may introduce a permanent
+ bit change; the ECC code would fix it, but more read operations
+ may introduce more bit changes and soft ECC errors may turn
+ into hard ECC errors; however, when these errors occur on the
+ same page that is being read, this should not be a problem
+ because UBI is doing scrubbing; in other words, once UBI notices
+ that there is a correctable bit-flip in an eraseblock, it moves
+ the contents of this physical eraseblock to a different physical
+ eraseblock, and re-maps the corresponding logical eraseblock to
+ the new physical eraseblock; so UBI refreshes the data and gets
+ rid of bit-flips, thus improving data integrity.
+
+ - "Read-disturb" errors can also occur on a page other
+ that the one being read, but which is within the same
+ eraseblock. This is not a problem if the read operations are
+ spread around somewhat evenly within the eraseblock, since the
+ bit-flip will soon be detected and corrected through the
+ "scrubbing" process described above. However if a particular
+ page within a block is rarely read, scrubbing will not have a
+ chance to fix errors, and they may accumulate over time until
+ they are unfixable. This is very similar the next problem:
+
+ - NAND flashes also have a "program-disturb" property,
+ which means that if you program a NAND page, you may introduce
+ a bit-flip in a different NAND page. The bit change can be
+ fixed by ECC, but with time the changes may accumulate
+ and become unfixable. Current UBI bit-flip handling only
+ partially helps here, because it is passive, which means that
+ UBI notices bit-flips only when performing users' read requests.
+ So if you never read the NAND page which accumulates bit-flips,
+ UBI will never notice this. One solution to these problems is
+ to implement a kind of "flash crawler" which would read all of
+ the NAND pages in the background from time to time, making UBI
+ notice and fix bit-flips. However, this is not implemented
+ today.
+
+
-However, there are 2 other aspects which may need closer attention. The
-first one is the "paired pages" problem (e.g., see
+
There is another aspect of MLC flashes which may need closer attention: the
+"paired pages" problem (e.g., see
this
Power Point presentation). Namely, MLC NAND pages are coupled in a sense
that if you cut power while writing to a page, you corrupt not only this page,
@@ -106,18 +140,6 @@ distances). So if you write data to, say, page 3 and cut the power, you may
end up with corrupted data in page 0. UBIFS is not ready to handle this
problem at the moment and this needs some work.
-The second aspect is the "program-disturb" MLC NAND property (see
-here),
-which means that if you program an MLC NAND page, you may introduce a bit-change
-in a different NAND page. Well, the bit change will be fixed by ECC, but with time
-the changes may accumulate and become unfixable. Current UBI bit-flip handling
-only partially helps here, because it is passive, which means that UBI notices
-bit-flips only when performing users read requests, so if you never read the
-MLC NAND area which accumulates bit-flips, UBI will never notice this. However,
-it is not difficult to implement a kind of "flash crawler" which would read the
-flash in background from time to time and make UBI notice and fix
-bit-flips.
-
Nevertheless, UBIFS authors never worked with real raw MLC NAND flash, so we
might have missed or misinterpreted some MLC NAND aspects. Any feed-back is
appreciated.
--
1.7.4.1