From mboxrd@z Thu Jan 1 00:00:00 1970 Received: from mail.free-electrons.com ([62.4.15.54]) by bombadil.infradead.org with esmtp (Exim 4.89 #1 (Red Hat Linux)) id 1eYpYR-0006RM-JR for linux-mtd@lists.infradead.org; Tue, 09 Jan 2018 08:46:45 +0000 Date: Tue, 9 Jan 2018 09:46:21 +0100 From: Boris Brezillon To: Ladislav Michl Cc: linux-mtd@lists.infradead.org, Richard Weinberger , David Woodhouse , Brian Norris , Marek Vasut , Cyrille Pitchen Subject: Re: [PATCH] mtd: nand: samsung: Disable subpage writes on E-die NAND Message-ID: <20180109094621.23a5e368@bbrezillon> In-Reply-To: <20180108234837.GA15913@lenoch> References: <20180108234837.GA15913@lenoch> MIME-Version: 1.0 Content-Type: text/plain; charset=US-ASCII Content-Transfer-Encoding: 7bit List-Id: Linux MTD discussion mailing list List-Unsubscribe: , List-Archive: List-Post: List-Help: List-Subscribe: , On Tue, 9 Jan 2018 00:48:37 +0100 Ladislav Michl wrote: > Samsung E-die SLC NAND manufactured using 21nm process supports only I would add the chip name here (K9F1G08U0E). > 1 partial program cycle, so disable subpage writes for it. Which means it does not support partial page programming, so how about rewording it like that: Samsung E-die SLC NAND manufactured using 21nm process (K9F1G08U0E) does not support partial page programming, so disable subpage writes for it. > Manufacturing process is stored in lowest two bits of 5th ID byte. > > Signed-off-by: Ladislav Michl > --- > Note: Patch generated and tested against next-20180108 on at91sam9g20 > board with K9F1G08U0E. Just out of curiosity, what are the symptoms when you don't have this flag set? > > drivers/mtd/nand/nand_samsung.c | 15 +++++++++++---- > 1 file changed, 11 insertions(+), 4 deletions(-) > > diff --git a/drivers/mtd/nand/nand_samsung.c b/drivers/mtd/nand/nand_samsung.c > index f6b0a63a068c..9400b4a84243 100644 > --- a/drivers/mtd/nand/nand_samsung.c > +++ b/drivers/mtd/nand/nand_samsung.c > @@ -92,10 +92,17 @@ static void samsung_nand_decode_id(struct nand_chip *chip) > } else { > nand_decode_ext_id(chip); > > - /* Datasheet values for SLC Samsung K9F4G08U0D-S[I|C]B0(T00) */ > - if (nand_is_slc(chip) && chip->id.data[1] == 0xDC) { > - chip->ecc_step_ds = 512; > - chip->ecc_strength_ds = 1; > + if (nand_is_slc(chip)) { > + /* K9F4G08U0D-S[I|C]B0(T00) */ > + if (chip->id.data[1] == 0xDC) { > + chip->ecc_step_ds = 512; > + chip->ecc_strength_ds = 1; > + } > + > + /* 21nm chips do not support partial page write */ > + if (chip->id.len > 4 && > + (chip->id.data[4] & GENMASK(1,0)) == 0x1) NAND vendors tend to change their ID decoding scheme a lot, so maybe we should be more restrictive here: replace "chip->id.len > 4" by "chip->id.len == 5" and restrict it to chip->id.data[1] == 0xF1. > + chip->options |= NAND_NO_SUBPAGE_WRITE; > } > } > }