[PATCH RFC] mtd: rawnand: Cure MICRON NAND partial erase issue

[PATCH RFC] mtd: rawnand: Cure MICRON NAND partial erase issue

[Thomas Gleixner]

On some Micron NAND chips block erase fails occasionaly despite the chip
claiming that it succeeded. The flash block seems to be not completely
erased and subsequent usage of the block results in hard to decode and very
subtle failures or corruption.

The exact reason is unknown, but experimentation has shown that it is only
happening when erasing an erase block which is partially written. Partially
written erase blocks are not uncommon with UBI/UBIFS.  Note, that this does
not always happen. It's a rare and random, but eventually fatal failure.

For now, just blindly write 6 pages to 0. Again experimentation has shown
that it's not sufficient to write pages at the beginning of the erase
block. There need to be pages written in the second half of the erase block
as well. So write 3 pages before and past the middle of the block.

Less than 6 pages might be sufficient, but it might even be necessary to
write more pages to make sure that it's completely cured. Two pages still
failed, but the 6 held up in a stress test scenario.

This should be optimized by keeping track of writes, but that needs proper
information about the issue.

As it's just observation and experimentation based, it's probably wise to
hold off on this until there is proper clarification about the root cause
of the problem. The patch is for reference so others can avoid to decode
this again, but there is no guarantee that it actually fixes the issue
completely.

Therefore:

Not-yet-signed-off-by: Thomas Gleixner <tglx@linutronix.de>

Cc: Boris Brezillon <boris.brezillon@bootlin.com>
Cc: Miquel Raynal <miquel.raynal@bootlin.com>
Cc: Richard Weinberger <richard@nod.at>

---

P.S.: This was debugged on an older kernel version (sigh) and ported
      forward without actual testing on mainline. My MTD foo is a bit
      rusty, so I won't be surprised if there are better ways to do that.

---
 drivers/mtd/nand/raw/nand_base.c   |   89 +++++++++++++++++++++++++++++++++++++
 drivers/mtd/nand/raw/nand_micron.c |    6 ++
 include/linux/mtd/rawnand.h        |    3 +
 3 files changed, 98 insertions(+)

--- a/drivers/mtd/nand/raw/nand_base.c
+++ b/drivers/mtd/nand/raw/nand_base.c
@@ -4122,6 +4122,91 @@ static int nand_erase(struct mtd_info *m
 	return nand_erase_nand(mtd_to_nand(mtd), instr, 0);
 }
 
+static bool page_empty(char *buf, int len)
+{
+	unsigned int *p = (unsigned int *) buf;
+	int i;
+
+	for (i = 0; i < len >> 2; i++, p++) {
+		if (*p != UINT_MAX)
+			return false;
+	}
+	return true;
+}
+
+#define NAND_ERASE_QUIRK_PAGES		6
+
+/**
+ * nand_erase_quirk - [INTERN] Work around partial erase issues
+ * @chip:	NAND chip object
+ * @page:	Eraseblock base page number
+ *
+ * On some Micron NAND chips block erase fails occasionaly despite the chip
+ * claiming that it succeeded. The flash block seems to be not completely
+ * erased and subsequent usage of the block results in hard to decode and
+ * very subtle failures or corruption.
+ *
+ * The exact reason is unknown, but experimentation has shown that it is
+ * only happening when erasing an erase block which is only partially
+ * written. Partially written erase blocks are not uncommon with UBI/UBIFS.
+ * Note, that this does not always happen. It's a rare and random, but
+ * eventually fatal failure.
+ *
+ * For now, just blindly write 6 pages to 0. Again experimentation has
+ * shown that it's not sufficient to write pages at the beginning of the
+ * erase block. There need to be pages written in the second half of the
+ * erase block as well. So write 3 pages before and past the middle of the
+ * block.
+ *
+ * Less than 6 pages might be sufficient, but it might even be necessary to
+ * write more pages to make sure that it's completely cured. 2 pages still
+ * failed, but the 6 held up in a stress test scenario.
+ *
+ * FIXME: This should be optimized by keeping track of writes, but that
+ * needs proper information about the issue.
+ */
+static int nand_erase_quirk(struct mtd_info *mtd, int page)
+{
+	struct nand_chip *chip = mtd->priv;
+	unsigned int i, offs;
+	u8 *buf;
+
+	if (!(chip->options & NAND_ERASE_QUIRK))
+		return 0;
+
+	buf = kmalloc(mtd->writesize, GFP_KERNEL);
+	if (!buf)
+		return -ENOMEM;
+
+	/* Start at (pages_per_block / 2) - 3 */
+	offs = 1 << (chip->phys_erase_shift - chip->page_shift);
+	offs = (offs >> 1) - (NAND_ERASE_QUIRK_PAGES / 2);
+	page = page + offs;
+
+	for (i = 0; i < NAND_ERASE_QUIRK_PAGES; i++, page++ ) {
+		struct mtd_oob_ops ops = {
+			.datbuf	= buf,
+			.len	= mtd->writesize,
+		};
+
+		/*
+		 * Read the page back and check whether it is completely
+		 * empty.
+		 */
+		nand_do_read_ops(mtd, page << chip->page_shift, &ops);
+		if (page_empty(buf, mtd->writesize))
+			continue;
+		memset(buf, 0, mtd->writesize);
+		/*
+		 * Fill page with zeros. Ignore write failure as there
+		 * is no way to recover here.
+		 */
+		nand_do_write_ops(mtd, page << chip->page_shift, &ops);
+	}
+	kfree(buf);
+	return 0;
+}
+
 /**
  * nand_erase_nand - [INTERN] erase block(s)
  * @chip: NAND chip object
@@ -4186,6 +4271,10 @@ int nand_erase_nand(struct nand_chip *ch
 		    (page + pages_per_block))
 			chip->pagebuf = -1;
 
+		ret = nand_erase_quirk(mtd, page);
+		if (ret)
+			goto erase_exit;
+
 		if (chip->legacy.erase)
 			status = chip->legacy.erase(chip,
 						    page & chip->pagemask);
--- a/drivers/mtd/nand/raw/nand_micron.c
+++ b/drivers/mtd/nand/raw/nand_micron.c
@@ -447,6 +447,12 @@ static int micron_nand_init(struct nand_
 	if (ret)
 		goto err_free_manuf_data;
 
+	/*
+	 * FIXME: Mark all Micron flash with the ERASE QUIRK bit for now as
+	 * it is unclear which flash types are affected/
+	 */
+	chip->options |= NAND_ERASE_QUIRK;
+
 	if (mtd->writesize == 2048)
 		chip->bbt_options |= NAND_BBT_SCAN2NDPAGE;
 
--- a/include/linux/mtd/rawnand.h
+++ b/include/linux/mtd/rawnand.h
@@ -163,6 +163,9 @@ enum nand_ecc_algo {
 /* Device needs 3rd row address cycle */
 #define NAND_ROW_ADDR_3		0x00004000
 
+/* Device requires erase quirk */
+#define NAND_ERASE_QUIRK	0x00008000
+
 /* Options valid for Samsung large page devices */
 #define NAND_SAMSUNG_LP_OPTIONS NAND_CACHEPRG
 

[PATCH RFC] mtd: rawnand: Cure MICRON NAND partial erase issue

[Wojtaszczyk, Piotr]

On which micron part are you seeing the problem. I'm using MT29F4G16A and see similar issue. Data sheet says that erase takes from 0.7ms up to 3ms don't know if Micron tunes the delay per part or per block. Maybe on some blocks it's not enough.

Re: [PATCH RFC] mtd: rawnand: Cure MICRON NAND partial erase issue

[Boris Brezillon]

+Bean,

Hi Thomas,

First of all, I'd like to thank you for sharing this patch. I'm
pretty sure this will save days of painful debug sessions to a lot of
people.

On Thu, 29 Nov 2018 22:12:50 +0100 (CET)
Thomas Gleixner <tglx@linutronix.de> wrote:

> On some Micron NAND chips block erase fails occasionaly despite the chip
> claiming that it succeeded. The flash block seems to be not completely
> erased and subsequent usage of the block results in hard to decode and very
> subtle failures or corruption.
> 
> The exact reason is unknown, but experimentation has shown that it is only
> happening when erasing an erase block which is partially written. Partially
> written erase blocks are not uncommon with UBI/UBIFS.  Note, that this does
> not always happen. It's a rare and random, but eventually fatal failure.
> 
> For now, just blindly write 6 pages to 0. Again experimentation has shown
> that it's not sufficient to write pages at the beginning of the erase
> block. There need to be pages written in the second half of the erase block
> as well. So write 3 pages before and past the middle of the block.
> 
> Less than 6 pages might be sufficient, but it might even be necessary to
> write more pages to make sure that it's completely cured. Two pages still
> failed, but the 6 held up in a stress test scenario.
> 
> This should be optimized by keeping track of writes, but that needs proper
> information about the issue.
> 
> As it's just observation and experimentation based, it's probably wise to
> hold off on this until there is proper clarification about the root cause
> of the problem. The patch is for reference so others can avoid to decode
> this again, but there is no guarantee that it actually fixes the issue
> completely.

I agree. I Cc-ed Bean from Micron. Maybe he can provide more
information on this issue.

> 
> Therefore:
> 
> Not-yet-signed-off-by: Thomas Gleixner <tglx@linutronix.de>
> 
> Cc: Boris Brezillon <boris.brezillon@bootlin.com>
> Cc: Miquel Raynal <miquel.raynal@bootlin.com>
> Cc: Richard Weinberger <richard@nod.at>
> 
> ---
> 
> P.S.: This was debugged on an older kernel version (sigh) and ported
>       forward without actual testing on mainline. My MTD foo is a bit
>       rusty, so I won't be surprised if there are better ways to do that.

Let's first wait for Bean's feedback before discussing implementation
details. BTW, do you remember the part number(s) of the flash(es)
impacted by this problem in your case?

Thanks,

Boris

> 
> ---
>  drivers/mtd/nand/raw/nand_base.c   |   89 +++++++++++++++++++++++++++++++++++++
>  drivers/mtd/nand/raw/nand_micron.c |    6 ++
>  include/linux/mtd/rawnand.h        |    3 +
>  3 files changed, 98 insertions(+)
> 
> --- a/drivers/mtd/nand/raw/nand_base.c
> +++ b/drivers/mtd/nand/raw/nand_base.c
> @@ -4122,6 +4122,91 @@ static int nand_erase(struct mtd_info *m
>  	return nand_erase_nand(mtd_to_nand(mtd), instr, 0);
>  }
>  
> +static bool page_empty(char *buf, int len)
> +{
> +	unsigned int *p = (unsigned int *) buf;
> +	int i;
> +
> +	for (i = 0; i < len >> 2; i++, p++) {
> +		if (*p != UINT_MAX)
> +			return false;
> +	}
> +	return true;
> +}
> +
> +#define NAND_ERASE_QUIRK_PAGES		6
> +
> +/**
> + * nand_erase_quirk - [INTERN] Work around partial erase issues
> + * @chip:	NAND chip object
> + * @page:	Eraseblock base page number
> + *
> + * On some Micron NAND chips block erase fails occasionaly despite the chip
> + * claiming that it succeeded. The flash block seems to be not completely
> + * erased and subsequent usage of the block results in hard to decode and
> + * very subtle failures or corruption.
> + *
> + * The exact reason is unknown, but experimentation has shown that it is
> + * only happening when erasing an erase block which is only partially
> + * written. Partially written erase blocks are not uncommon with UBI/UBIFS.
> + * Note, that this does not always happen. It's a rare and random, but
> + * eventually fatal failure.
> + *
> + * For now, just blindly write 6 pages to 0. Again experimentation has
> + * shown that it's not sufficient to write pages at the beginning of the
> + * erase block. There need to be pages written in the second half of the
> + * erase block as well. So write 3 pages before and past the middle of the
> + * block.
> + *
> + * Less than 6 pages might be sufficient, but it might even be necessary to
> + * write more pages to make sure that it's completely cured. 2 pages still
> + * failed, but the 6 held up in a stress test scenario.
> + *
> + * FIXME: This should be optimized by keeping track of writes, but that
> + * needs proper information about the issue.
> + */
> +static int nand_erase_quirk(struct mtd_info *mtd, int page)
> +{
> +	struct nand_chip *chip = mtd->priv;
> +	unsigned int i, offs;
> +	u8 *buf;
> +
> +	if (!(chip->options & NAND_ERASE_QUIRK))
> +		return 0;
> +
> +	buf = kmalloc(mtd->writesize, GFP_KERNEL);
> +	if (!buf)
> +		return -ENOMEM;
> +
> +	/* Start at (pages_per_block / 2) - 3 */
> +	offs = 1 << (chip->phys_erase_shift - chip->page_shift);
> +	offs = (offs >> 1) - (NAND_ERASE_QUIRK_PAGES / 2);
> +	page = page + offs;
> +
> +	for (i = 0; i < NAND_ERASE_QUIRK_PAGES; i++, page++ ) {
> +		struct mtd_oob_ops ops = {
> +			.datbuf	= buf,
> +			.len	= mtd->writesize,
> +		};
> +
> +		/*
> +		 * Read the page back and check whether it is completely
> +		 * empty.
> +		 */
> +		nand_do_read_ops(mtd, page << chip->page_shift, &ops);
> +		if (page_empty(buf, mtd->writesize))
> +			continue;
> +		memset(buf, 0, mtd->writesize);
> +		/*
> +		 * Fill page with zeros. Ignore write failure as there
> +		 * is no way to recover here.
> +		 */
> +		nand_do_write_ops(mtd, page << chip->page_shift, &ops);
> +	}
> +	kfree(buf);
> +	return 0;
> +}
> +
>  /**
>   * nand_erase_nand - [INTERN] erase block(s)
>   * @chip: NAND chip object
> @@ -4186,6 +4271,10 @@ int nand_erase_nand(struct nand_chip *ch
>  		    (page + pages_per_block))
>  			chip->pagebuf = -1;
>  
> +		ret = nand_erase_quirk(mtd, page);
> +		if (ret)
> +			goto erase_exit;
> +
>  		if (chip->legacy.erase)
>  			status = chip->legacy.erase(chip,
>  						    page & chip->pagemask);
> --- a/drivers/mtd/nand/raw/nand_micron.c
> +++ b/drivers/mtd/nand/raw/nand_micron.c
> @@ -447,6 +447,12 @@ static int micron_nand_init(struct nand_
>  	if (ret)
>  		goto err_free_manuf_data;
>  
> +	/*
> +	 * FIXME: Mark all Micron flash with the ERASE QUIRK bit for now as
> +	 * it is unclear which flash types are affected/
> +	 */
> +	chip->options |= NAND_ERASE_QUIRK;
> +
>  	if (mtd->writesize == 2048)
>  		chip->bbt_options |= NAND_BBT_SCAN2NDPAGE;
>  
> --- a/include/linux/mtd/rawnand.h
> +++ b/include/linux/mtd/rawnand.h
> @@ -163,6 +163,9 @@ enum nand_ecc_algo {
>  /* Device needs 3rd row address cycle */
>  #define NAND_ROW_ADDR_3		0x00004000
>  
> +/* Device requires erase quirk */
> +#define NAND_ERASE_QUIRK	0x00008000
> +
>  /* Options valid for Samsung large page devices */
>  #define NAND_SAMSUNG_LP_OPTIONS NAND_CACHEPRG
>  

Re: [PATCH RFC] mtd: rawnand: Cure MICRON NAND partial erase issue

[Thomas Gleixner]

On Sun, 2 Dec 2018, Boris Brezillon wrote:
> First of all, I'd like to thank you for sharing this patch. I'm
> pretty sure this will save days of painful debug sessions to a lot of
> people.

Yeah. It's painful because it's a sporadic failure.

> On Thu, 29 Nov 2018 22:12:50 +0100 (CET)
> Thomas Gleixner <tglx@linutronix.de> wrote:
> > P.S.: This was debugged on an older kernel version (sigh) and ported
> >       forward without actual testing on mainline. My MTD foo is a bit
> >       rusty, so I won't be surprised if there are better ways to do that.
> 
> Let's first wait for Bean's feedback before discussing implementation
> details. BTW, do you remember the part number(s) of the flash(es)
> impacted by this problem in your case?

MT29F8G08 is one of them. The other one I can't tell right now due to
traveling.

Thanks,

	Thomas

[PATCH RFC] mtd: rawnand: Cure MICRON NAND partial erase issue

[Piotr Wojtaszczyk]

On Thu, 29 Nov 2018 22:12:50 +0100 (CET)
Thomas Gleixner <tglx at linutronix.de> wrote:

 > On some Micron NAND chips block erase fails occasionaly despite the chip
 > claiming that it succeeded. The flash block seems to be not completely
 > erased and subsequent usage of the block results in hard to decode 
and very
 > subtle failures or corruption.

Doesn't UBI check block after erase in do_sync_erase()? Do the bitflips 
develop over time?

--

Peter

Re: [PATCH RFC] mtd: rawnand: Cure MICRON NAND partial erase issue

[Richard Weinberger]

Am Montag, 3. Dezember 2018, 19:55:46 CET schrieb Piotr Wojtaszczyk:
> On Thu, 29 Nov 2018 22:12:50 +0100 (CET)
> Thomas Gleixner <tglx at linutronix.de> wrote:
> 
>  > On some Micron NAND chips block erase fails occasionaly despite the chip
>  > claiming that it succeeded. The flash block seems to be not completely
>  > erased and subsequent usage of the block results in hard to decode 
> and very
>  > subtle failures or corruption.
> 
> Doesn't UBI check block after erase in do_sync_erase()? Do the bitflips 
> develop over time?

You mean ubi_self_check_all_ff()? This is a very expensive self-check
which is disabled by default and makes only sense then you test UBI itself.
Also think of power-cuts, what happens if you face power-loss right
after mtd_erase() and before the check?

Finally, I'm not sure if you can detect partial erase right after
mtd_erase(). I fear failure happens after you write to that block.

Thanks,
//richard  

Re: [PATCH RFC] mtd: rawnand: Cure MICRON NAND partial erase issue

[Piotr Wojtaszczyk]

On 12/3/18 1:02 PM, Richard Weinberger wrote:
> Am Montag, 3. Dezember 2018, 19:55:46 CET schrieb Piotr Wojtaszczyk:
>> On Thu, 29 Nov 2018 22:12:50 +0100 (CET)
>> Thomas Gleixner <tglx at linutronix.de> wrote:
>>
>>   > On some Micron NAND chips block erase fails occasionaly despite the chip
>>   > claiming that it succeeded. The flash block seems to be not completely
>>   > erased and subsequent usage of the block results in hard to decode
>> and very
>>   > subtle failures or corruption.
>>
>> Doesn't UBI check block after erase in do_sync_erase()? Do the bitflips
>> develop over time?
> You mean ubi_self_check_all_ff()? This is a very expensive self-check
> which is disabled by default and makes only sense then you test UBI itself.
> Also think of power-cuts, what happens if you face power-loss right
> after mtd_erase() and before the check?
>
> Finally, I'm not sure if you can detect partial erase right after
> mtd_erase(). I fear failure happens after you write to that block.
>
> Thanks,
> //richard
>
>
Oh yes the ubi_self_check_all_ff() is indeed disabled. Partially erased 
blocks I think are being caught at attach in scan_peb(), they are put in 
ai->erase list for later erase again.

--

Peter

RE: [EXT] Re: [PATCH RFC] mtd: rawnand: Cure MICRON NAND partial erase issue

[Bean Huo (beanhuo)]

>+Bean,
>
>Hi Thomas,
>
>First of all, I'd like to thank you for sharing this patch. I'm pretty sure this will
>save days of painful debug sessions to a lot of people.
>
>On Thu, 29 Nov 2018 22:12:50 +0100 (CET) Thomas Gleixner
><tglx@linutronix.de> wrote:
>
>> On some Micron NAND chips block erase fails occasionaly despite the
>> chip claiming that it succeeded. The flash block seems to be not
>> completely erased and subsequent usage of the block results in hard to
>> decode and very subtle failures or corruption.
>>
>> The exact reason is unknown, but experimentation has shown that it is
>> only happening when erasing an erase block which is partially written.
>> Partially written erase blocks are not uncommon with UBI/UBIFS.  Note,
>> that this does not always happen. It's a rare and random, but eventually
>fatal failure.
>>
>> For now, just blindly write 6 pages to 0. Again experimentation has
>> shown that it's not sufficient to write pages at the beginning of the
>> erase block. There need to be pages written in the second half of the
>> erase block as well. So write 3 pages before and past the middle of the block.
>>
>> Less than 6 pages might be sufficient, but it might even be necessary
>> to write more pages to make sure that it's completely cured. Two pages
>> still failed, but the 6 held up in a stress test scenario.
>>
>> This should be optimized by keeping track of writes, but that needs
>> proper information about the issue.
>>
>> As it's just observation and experimentation based, it's probably wise
>> to hold off on this until there is proper clarification about the root
>> cause of the problem. The patch is for reference so others can avoid
>> to decode this again, but there is no guarantee that it actually fixes
>> the issue completely.
>
>I agree. I Cc-ed Bean from Micron. Maybe he can provide more information
>on this issue.
>
>>
>> Therefore:
>>
>> Not-yet-signed-off-by: Thomas Gleixner <tglx@linutronix.de>
>>
>> Cc: Boris Brezillon <boris.brezillon@bootlin.com>
>> Cc: Miquel Raynal <miquel.raynal@bootlin.com>
>> Cc: Richard Weinberger <richard@nod.at>
>>
>> ---
>>
>> P.S.: This was debugged on an older kernel version (sigh) and ported
>>       forward without actual testing on mainline. My MTD foo is a bit
>>       rusty, so I won't be surprised if there are better ways to do that.
>
>Let's first wait for Bean's feedback before discussing implementation details.
>BTW, do you remember the part number(s) of the flash(es) impacted by this
>problem in your case?
>
Thanks, let me know this issue, I will look at this

>Thanks,
>
>Boris
>

Re: [EXT] Re: [PATCH RFC] mtd: rawnand: Cure MICRON NAND partial erase issue

[Miquel Raynal]

Hi Bean,

"Bean Huo (beanhuo)" <beanhuo@micron.com> wrote on Fri, 7 Dec 2018
13:12:56 +0000:

> >+Bean,
> >
> >Hi Thomas,
> >
> >First of all, I'd like to thank you for sharing this patch. I'm pretty sure this will
> >save days of painful debug sessions to a lot of people.
> >
> >On Thu, 29 Nov 2018 22:12:50 +0100 (CET) Thomas Gleixner
> ><tglx@linutronix.de> wrote:
> >  
> >> On some Micron NAND chips block erase fails occasionaly despite the
> >> chip claiming that it succeeded. The flash block seems to be not
> >> completely erased and subsequent usage of the block results in hard to
> >> decode and very subtle failures or corruption.
> >>
> >> The exact reason is unknown, but experimentation has shown that it is
> >> only happening when erasing an erase block which is partially written.
> >> Partially written erase blocks are not uncommon with UBI/UBIFS.  Note,
> >> that this does not always happen. It's a rare and random, but eventually  
> >fatal failure.  
> >>
> >> For now, just blindly write 6 pages to 0. Again experimentation has
> >> shown that it's not sufficient to write pages at the beginning of the
> >> erase block. There need to be pages written in the second half of the
> >> erase block as well. So write 3 pages before and past the middle of the block.
> >>
> >> Less than 6 pages might be sufficient, but it might even be necessary
> >> to write more pages to make sure that it's completely cured. Two pages
> >> still failed, but the 6 held up in a stress test scenario.
> >>
> >> This should be optimized by keeping track of writes, but that needs
> >> proper information about the issue.
> >>
> >> As it's just observation and experimentation based, it's probably wise
> >> to hold off on this until there is proper clarification about the root
> >> cause of the problem. The patch is for reference so others can avoid
> >> to decode this again, but there is no guarantee that it actually fixes
> >> the issue completely.  
> >
> >I agree. I Cc-ed Bean from Micron. Maybe he can provide more information
> >on this issue.
> >  
> >>
> >> Therefore:
> >>
> >> Not-yet-signed-off-by: Thomas Gleixner <tglx@linutronix.de>
> >>
> >> Cc: Boris Brezillon <boris.brezillon@bootlin.com>
> >> Cc: Miquel Raynal <miquel.raynal@bootlin.com>
> >> Cc: Richard Weinberger <richard@nod.at>
> >>
> >> ---
> >>
> >> P.S.: This was debugged on an older kernel version (sigh) and ported
> >>       forward without actual testing on mainline. My MTD foo is a bit
> >>       rusty, so I won't be surprised if there are better ways to do that.  
> >
> >Let's first wait for Bean's feedback before discussing implementation details.
> >BTW, do you remember the part number(s) of the flash(es) impacted by this
> >problem in your case?
> >  
> Thanks, let me know this issue, I will look at this

I think it's time for you to comment on the situation.


Thanks,
Miquèl

RE: [EXT] Re: [PATCH RFC] mtd: rawnand: Cure MICRON NAND partial erase issue

[Bean Huo (beanhuo)]

Hi, all
Micron developed one patch related to what mentioned here. which is based on v4.2.
I just submitted it here http://lists.infradead.org/pipermail/linux-mtd/2018-December/086446.html
, please review. And I will update that later based on your comments.

>+Bean,
>
>Hi Thomas,
>
>First of all, I'd like to thank you for sharing this patch. I'm pretty sure this will
>save days of painful debug sessions to a lot of people.
>
>On Thu, 29 Nov 2018 22:12:50 +0100 (CET) Thomas Gleixner
><tglx@linutronix.de> wrote:
>
>> On some Micron NAND chips block erase fails occasionaly despite the
>> chip claiming that it succeeded. The flash block seems to be not
>> completely erased and subsequent usage of the block results in hard to
>> decode and very subtle failures or corruption.
>>
>> The exact reason is unknown, but experimentation has shown that it is
>> only happening when erasing an erase block which is partially written.
>> Partially written erase blocks are not uncommon with UBI/UBIFS.  Note,
>> that this does not always happen. It's a rare and random, but eventually
>fatal failure.
>>
>> For now, just blindly write 6 pages to 0. Again experimentation has
>> shown that it's not sufficient to write pages at the beginning of the
>> erase block. There need to be pages written in the second half of the
>> erase block as well. So write 3 pages before and past the middle of the block.
>>
>> Less than 6 pages might be sufficient, but it might even be necessary
>> to write more pages to make sure that it's completely cured. Two pages
>> still failed, but the 6 held up in a stress test scenario.
>>
>> This should be optimized by keeping track of writes, but that needs
>> proper information about the issue.
>>
>> As it's just observation and experimentation based, it's probably wise
>> to hold off on this until there is proper clarification about the root
>> cause of the problem. The patch is for reference so others can avoid
>> to decode this again, but there is no guarantee that it actually fixes
>> the issue completely.
>
>I agree. I Cc-ed Bean from Micron. Maybe he can provide more information
>on this issue.
>
>>
>> Therefore:
>>
>> Not-yet-signed-off-by: Thomas Gleixner <tglx@linutronix.de>
>>
>> Cc: Boris Brezillon <boris.brezillon@bootlin.com>
>> Cc: Miquel Raynal <miquel.raynal@bootlin.com>
>> Cc: Richard Weinberger <richard@nod.at>
>>
>> ---
>>
>> P.S.: This was debugged on an older kernel version (sigh) and ported
>>       forward without actual testing on mainline. My MTD foo is a bit
>>       rusty, so I won't be surprised if there are better ways to do that.
>
>Let's first wait for Bean's feedback before discussing implementation details.
>BTW, do you remember the part number(s) of the flash(es) impacted by this
>problem in your case?
>
>Thanks,
>
>Boris
>
>>
>> ---
>>  drivers/mtd/nand/raw/nand_base.c   |   89
>+++++++++++++++++++++++++++++++++++++
>>  drivers/mtd/nand/raw/nand_micron.c |    6 ++
>>  include/linux/mtd/rawnand.h        |    3 +
>>  3 files changed, 98 insertions(+)
>>
>> --- a/drivers/mtd/nand/raw/nand_base.c
>> +++ b/drivers/mtd/nand/raw/nand_base.c
>> @@ -4122,6 +4122,91 @@ static int nand_erase(struct mtd_info *m
>>  	return nand_erase_nand(mtd_to_nand(mtd), instr, 0);  }
>>
>> +static bool page_empty(char *buf, int len) {
>> +	unsigned int *p = (unsigned int *) buf;
>> +	int i;
>> +
>> +	for (i = 0; i < len >> 2; i++, p++) {
>> +		if (*p != UINT_MAX)
>> +			return false;
>> +	}
>> +	return true;
>> +}
>> +
>> +#define NAND_ERASE_QUIRK_PAGES		6
>> +
>> +/**
>> + * nand_erase_quirk - [INTERN] Work around partial erase issues
>> + * @chip:	NAND chip object
>> + * @page:	Eraseblock base page number
>> + *
>> + * On some Micron NAND chips block erase fails occasionaly despite
>> +the chip
>> + * claiming that it succeeded. The flash block seems to be not
>> +completely
>> + * erased and subsequent usage of the block results in hard to decode
>> +and
>> + * very subtle failures or corruption.
>> + *
>> + * The exact reason is unknown, but experimentation has shown that it
>> +is
>> + * only happening when erasing an erase block which is only partially
>> + * written. Partially written erase blocks are not uncommon with UBI/UBIFS.
>> + * Note, that this does not always happen. It's a rare and random,
>> +but
>> + * eventually fatal failure.
>> + *
>> + * For now, just blindly write 6 pages to 0. Again experimentation
>> +has
>> + * shown that it's not sufficient to write pages at the beginning of
>> +the
>> + * erase block. There need to be pages written in the second half of
>> +the
>> + * erase block as well. So write 3 pages before and past the middle
>> +of the
>> + * block.
>> + *
>> + * Less than 6 pages might be sufficient, but it might even be
>> +necessary to
>> + * write more pages to make sure that it's completely cured. 2 pages
>> +still
>> + * failed, but the 6 held up in a stress test scenario.
>> + *
>> + * FIXME: This should be optimized by keeping track of writes, but
>> +that
>> + * needs proper information about the issue.
>> + */
>> +static int nand_erase_quirk(struct mtd_info *mtd, int page) {
>> +	struct nand_chip *chip = mtd->priv;
>> +	unsigned int i, offs;
>> +	u8 *buf;
>> +
>> +	if (!(chip->options & NAND_ERASE_QUIRK))
>> +		return 0;
>> +
>> +	buf = kmalloc(mtd->writesize, GFP_KERNEL);
>> +	if (!buf)
>> +		return -ENOMEM;
>> +
>> +	/* Start at (pages_per_block / 2) - 3 */
>> +	offs = 1 << (chip->phys_erase_shift - chip->page_shift);
>> +	offs = (offs >> 1) - (NAND_ERASE_QUIRK_PAGES / 2);
>> +	page = page + offs;
>> +
>> +	for (i = 0; i < NAND_ERASE_QUIRK_PAGES; i++, page++ ) {
>> +		struct mtd_oob_ops ops = {
>> +			.datbuf	= buf,
>> +			.len	= mtd->writesize,
>> +		};
>> +
>> +		/*
>> +		 * Read the page back and check whether it is completely
>> +		 * empty.
>> +		 */
>> +		nand_do_read_ops(mtd, page << chip->page_shift, &ops);
>> +		if (page_empty(buf, mtd->writesize))
>> +			continue;
>> +		memset(buf, 0, mtd->writesize);
>> +		/*
>> +		 * Fill page with zeros. Ignore write failure as there
>> +		 * is no way to recover here.
>> +		 */
>> +		nand_do_write_ops(mtd, page << chip->page_shift, &ops);
>> +	}
>> +	kfree(buf);
>> +	return 0;
>> +}
>> +
>>  /**
>>   * nand_erase_nand - [INTERN] erase block(s)
>>   * @chip: NAND chip object
>> @@ -4186,6 +4271,10 @@ int nand_erase_nand(struct nand_chip *ch
>>  		    (page + pages_per_block))
>>  			chip->pagebuf = -1;
>>
>> +		ret = nand_erase_quirk(mtd, page);
>> +		if (ret)
>> +			goto erase_exit;
>> +
>>  		if (chip->legacy.erase)
>>  			status = chip->legacy.erase(chip,
>>  						    page & chip->pagemask);
>> --- a/drivers/mtd/nand/raw/nand_micron.c
>> +++ b/drivers/mtd/nand/raw/nand_micron.c
>> @@ -447,6 +447,12 @@ static int micron_nand_init(struct nand_
>>  	if (ret)
>>  		goto err_free_manuf_data;
>>
>> +	/*
>> +	 * FIXME: Mark all Micron flash with the ERASE QUIRK bit for now as
>> +	 * it is unclear which flash types are affected/
>> +	 */
>> +	chip->options |= NAND_ERASE_QUIRK;
>> +
>>  	if (mtd->writesize == 2048)
>>  		chip->bbt_options |= NAND_BBT_SCAN2NDPAGE;
>>
>> --- a/include/linux/mtd/rawnand.h
>> +++ b/include/linux/mtd/rawnand.h
>> @@ -163,6 +163,9 @@ enum nand_ecc_algo {
>>  /* Device needs 3rd row address cycle */
>>  #define NAND_ROW_ADDR_3		0x00004000
>>
>> +/* Device requires erase quirk */
>> +#define NAND_ERASE_QUIRK	0x00008000
>> +
>>  /* Options valid for Samsung large page devices */  #define
>> NAND_SAMSUNG_LP_OPTIONS NAND_CACHEPRG
>>