Re: [PATCH V3 1/3] mtd: add new fields to nand_flash_dev{}

Artem Bityutskiy
2013-03-02T14:19:07Z

On Mon, 2013-01-28 at 12:57 +0800, Huang Shijie wrote:
> As time goes on, we begin to meet the situation that we can not get enough
> information from some nand chips's id data. Take some Toshiba's nand chips
> for example. I have 4 Toshiba's nand chips in my hand:
> TC58NVG2S0F, TC58NVG3S0F, TC58NVG5D2, TC58NVG6D2
>
> When we read these chips' datasheets, we will get the geometry of these chips:
> TC58NVG2S0F : 4096 + 224
> TC58NVG3S0F : 4096 + 232
> TC58NVG5D2 : 8192 + 640
> TC58NVG6D2 : 8192 + 640
>
> But we can not parse out the correct oob size for these chips from the id data.

Very good start of the commit message - you clearly defined the problem.

> So it is time to add some new fields to the nand_flash_dev{}, and update the
> detection mechanisms.

But continued with very poor description of how you address the problem.
Please, provide a better description.

> This patch just adds some new fields to the nand_flash_dev{}:
> @id[8] : the 8 bytes id data.

id[8] = 8 bytes id data, just like password[5] = 5 bytes of password
data. Please, provide a better commentary.

> @id_len: the valid length of the id data.

What does "valid" mean? Are "invalid" parts?

> @oobsize: the oob size.

Try to invent a better comment.

Huang, it is not that I am trying to be difficult, but I truly do not
understand how you are solving the issue.

--
Best Regards,
Artem Bityutskiy