[PATCH 3.17 098/141] power: bq2415x_charger: Fix memory leak on DTS parsing error

Greg Kroah-Hartman
2014-11-19T22:14:59Z

From: Krzysztof Kozlowski <k.kozlowski@samsung.com>

commit 21e863b233553998737e1b506c823a00bf012e00 upstream.

Memory allocated for 'name' was leaking if required binding properties
were not present.

The memory for 'name' was allocated early at probe with kasprintf(). It
was freed in error paths executed before and after parsing DTS but not
in that error path.

Fix the error path for parsing device tree properties.

Signed-off-by: Krzysztof Kozlowski <k.kozlowski@samsung.com>
Fixes: faffd234cf85 ("bq2415x_charger: Add DT support")
Signed-off-by: Sebastian Reichel <sre@kernel.org>
Signed-off-by: Greg Kroah-Hartman <gregkh@linuxfoundation.org>

---
drivers/power/bq2415x_charger.c | 12 ++++++------
1 file changed, 6 insertions(+), 6 deletions(-)

--- a/drivers/power/bq2415x_charger.c
+++ b/drivers/power/bq2415x_charger.c
@@ -1609,27 +1609,27 @@ static int bq2415x_probe(struct i2c_clie
ret = of_property_read_u32(np, "ti,current-limit",
&bq->init_data.current_limit);
if (ret)
- return ret;
+ goto error_2;
ret = of_property_read_u32(np, "ti,weak-battery-voltage",
&bq->init_data.weak_battery_voltage);
if (ret)
- return ret;
+ goto error_2;
ret = of_property_read_u32(np, "ti,battery-regulation-voltage",
&bq->init_data.battery_regulation_voltage);
if (ret)
- return ret;
+ goto error_2;
ret = of_property_read_u32(np, "ti,charge-current",
&bq->init_data.charge_current);
if (ret)
- return ret;
+ goto error_2;
ret = of_property_read_u32(np, "ti,termination-current",
&bq->init_data.termination_current);
if (ret)
- return ret;
+ goto error_2;
ret = of_property_read_u32(np, "ti,resistor-sense",
&bq->init_data.resistor_sense);
if (ret)
- return ret;
+ goto error_2;
} else {
memcpy(&bq->init_data, pdata, sizeof(bq->init_data));
}