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From: Miquel Raynal <miquel.raynal@bootlin.com>
To: Cheng Ming Lin <linchengming884@gmail.com>
Cc: Richard Weinberger <richard@nod.at>,
	 Vignesh Raghavendra <vigneshr@ti.com>,
	 Rob Herring <robh@kernel.org>,
	 Krzysztof Kozlowski <krzk+dt@kernel.org>,
	 Conor Dooley <conor+dt@kernel.org>,
	 Tudor Ambarus <tudor.ambarus@linaro.org>,
	 Mikhail Kshevetskiy <mikhail.kshevetskiy@iopsys.eu>,
	 Pablo Martin-Gomez <pmartin-gomez@freebox.fr>,
	 Tianling Shen <cnsztl@gmail.com>,
	 Pratyush Yadav <pratyush@kernel.org>,
	 linux-mtd@lists.infradead.org, devicetree@vger.kernel.org,
	 linux-kernel@vger.kernel.org, alvinzhou@mxic.com.tw,
	 Cheng Ming Lin <chengminglin@mxic.com.tw>
Subject: Re: [PATCH v7 1/3] dt-bindings: mtd: spinand: Add randomizer enable/disable properties
Date: Wed, 25 Feb 2026 16:09:45 +0100	[thread overview]
Message-ID: <87o6lcq2py.fsf@bootlin.com> (raw)
In-Reply-To: <20260225015705.1113199-2-linchengming884@gmail.com> (Cheng Ming Lin's message of "Wed, 25 Feb 2026 09:57:03 +0800")

On 25/02/2026 at 09:57:03 +08, Cheng Ming Lin <linchengming884@gmail.com> wrote:

> From: Cheng Ming Lin <chengminglin@mxic.com.tw>
>
> Add "nand-randomizer-enable" and "nand-randomizer-disable" boolean
> properties.
>
> These properties allow enabling or disabling the randomizer feature
> via the device tree.
>
> According to JEDEC standard JESD22-A117E, no single data pattern
> represents a universal worst-case for all NAND flash failure mechanisms.
> Different patterns, such as fully programmed, checkerboard, or mostly
> erased, can disproportionately stress specific cells (e.g., programmed,
> erased, or those influenced by adjacent states).
>
> Given that no fixed pattern can cover all scenarios, the use of a
> randomized data pattern is a practical and effective mitigation strategy.
> Our hardware implements a randomizer feature that scrambles user data
> before it is written to the flash and restores the original data upon read.
>
> This ensures the data stored on the media is more evenly distributed,
> thus reducing pattern-dependent degradation. This is especially crucial
> for preventing errors caused by unbalanced data (e.g., all zeros or
> all ones) in blocks with high program/erase (P/E) cycle counts.
> Ultimately, the randomizer improves the long-term reliability and
> endurance of the flash device.
>
> Please refer to the following link for randomizer feature:
> Link:
> https://www.mxic.com.tw/Lists/ApplicationNote/Attachments/2151/AN1051V1-The%20Introduction%20of%20Randomizer%20Feature%20on%20MX30xFxG28AD_MX35xFxG24AD.

This link brings me to a "We have moved to our new home" page.

Anyhow, this Links does not make much sense in the binding. If this is a
very generic AN, why not, but maybe I'd move it to the SPI NAND patches,
as the name implies that it is a bit specific to Macronix chips.

> Signed-off-by: Cheng Ming Lin <chengminglin@mxic.com.tw>

Otherwise both the binding and code look ok from my PoV. So besides the
Link that must be moved and fixed, I'll wait for binding approval.

Thanks,
Miquèl

  reply	other threads:[~2026-02-25 15:09 UTC|newest]

Thread overview: 7+ messages / expand[flat|nested]  mbox.gz  Atom feed  top
2026-02-25  1:57 [PATCH v7 0/3] mtd: spi-nand: Add support for randomizer feature Cheng Ming Lin
2026-02-25  1:57 ` [PATCH v7 1/3] dt-bindings: mtd: spinand: Add randomizer enable/disable properties Cheng Ming Lin
2026-02-25 15:09   ` Miquel Raynal [this message]
2026-02-25 15:10   ` Miquel Raynal
2026-02-26  1:39     ` Cheng Ming Lin
2026-02-25  1:57 ` [PATCH v7 2/3] mtd: spi-nand: Add support for randomizer Cheng Ming Lin
2026-02-25  1:57 ` [PATCH v7 3/3] mtd: spi-nand: macronix: Enable randomizer support Cheng Ming Lin

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