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From: Jernej Skrabec <jernej.skrabec@gmail.com>
To: andre.przywara@arm.com, jagan@amarulasolutions.com
Cc: u-boot@lists.denx.de, Jernej Skrabec <jernej.skrabec@gmail.com>
Subject: [PATCH 3/8] sunxi: parameterize H616 DRAM ODT values
Date: Sun, 11 Dec 2022 17:32:08 +0100	[thread overview]
Message-ID: <20221211163213.98540-4-jernej.skrabec@gmail.com> (raw)
In-Reply-To: <20221211163213.98540-1-jernej.skrabec@gmail.com>

While ODT values for same memory type are similar, they are not
necessary the same. Let's parameterize them and make parameter same as
in vendor DRAM settings. That way it will be easy to introduce new board
support.

Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
---
 .../include/asm/arch-sunxi/dram_sun50i_h616.h |  3 +
 arch/arm/mach-sunxi/Kconfig                   | 15 +++++
 arch/arm/mach-sunxi/dram_sun50i_h616.c        | 59 ++++++++++++-------
 configs/orangepi_zero2_defconfig              |  3 +
 4 files changed, 58 insertions(+), 22 deletions(-)

diff --git a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
index 134679d55205..c9e1f84bfcdd 100644
--- a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
+++ b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
@@ -144,6 +144,9 @@ struct dram_para {
 	u8 rows;
 	u8 ranks;
 	u8 bus_full_width;
+	u32 dx_odt;
+	u32 dx_dri;
+	u32 ca_dri;
 };
 
 
diff --git a/arch/arm/mach-sunxi/Kconfig b/arch/arm/mach-sunxi/Kconfig
index dbe6005daab1..cad53f19912c 100644
--- a/arch/arm/mach-sunxi/Kconfig
+++ b/arch/arm/mach-sunxi/Kconfig
@@ -83,6 +83,21 @@ config DRAM_SUN50I_H616_UNKNOWN_FEATURE
 	---help---
 	  Select this when DRAM on your H616 board needs this unknown
 	  feature.
+
+config DRAM_SUN50I_H616_DX_ODT
+	hex "H616 DRAM DX ODT parameter"
+	help
+	  DX ODT value from vendor DRAM settings.
+
+config DRAM_SUN50I_H616_DX_DRI
+	hex "H616 DRAM DX DRI parameter"
+	help
+	  DX DRI value from vendor DRAM settings.
+
+config DRAM_SUN50I_H616_CA_DRI
+	hex "H616 DRAM CA DRI parameter"
+	help
+	  CA DRI value from vendor DRAM settings.
 endif
 
 config SUN6I_PRCM
diff --git a/arch/arm/mach-sunxi/dram_sun50i_h616.c b/arch/arm/mach-sunxi/dram_sun50i_h616.c
index 49983bf7a1b8..06a07dfbf9cc 100644
--- a/arch/arm/mach-sunxi/dram_sun50i_h616.c
+++ b/arch/arm/mach-sunxi/dram_sun50i_h616.c
@@ -234,37 +234,49 @@ static const u8 phy_init[] = {
 	0x09, 0x05, 0x18
 };
 
-static void mctl_phy_configure_odt(void)
+static void mctl_phy_configure_odt(struct dram_para *para)
 {
-	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x388);
-	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x38c);
+	unsigned int val;
 
-	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x3c8);
-	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x3cc);
+	val = para->dx_dri & 0x1f;
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x388);
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x38c);
 
-	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x408);
-	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x40c);
+	val = (para->dx_dri >> 8) & 0x1f;
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x3c8);
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x3cc);
 
-	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x448);
-	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x44c);
+	val = (para->dx_dri >> 16) & 0x1f;
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x408);
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x40c);
 
-	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x340);
-	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x344);
+	val = (para->dx_dri >> 24) & 0x1f;
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x448);
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x44c);
 
-	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x348);
-	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x34c);
+	val = para->ca_dri & 0x1f;
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x340);
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x344);
 
-	writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x380);
-	writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x384);
+	val = (para->ca_dri >> 8) & 0x1f;
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x348);
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x34c);
 
-	writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x3c0);
-	writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x3c4);
+	val = para->dx_odt & 0x1f;
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x380);
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x384);
 
-	writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x400);
-	writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x404);
+	val = (para->dx_odt >> 8) & 0x1f;
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x3c0);
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x3c4);
 
-	writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x440);
-	writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x444);
+	val = (para->dx_odt >> 16) & 0x1f;
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x400);
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x404);
+
+	val = (para->dx_odt >> 24) & 0x1f;
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x440);
+	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x444);
 
 	dmb();
 }
@@ -722,7 +734,7 @@ static bool mctl_phy_init(struct dram_para *para)
 	writel(0x80, SUNXI_DRAM_PHY0_BASE + 0x45c);
 
 	if (IS_ENABLED(CONFIG_DRAM_ODT_EN))
-		mctl_phy_configure_odt();
+		mctl_phy_configure_odt(para);
 
 	clrsetbits_le32(SUNXI_DRAM_PHY0_BASE + 4, 7, 0xa);
 
@@ -1007,6 +1019,9 @@ unsigned long sunxi_dram_init(void)
 	struct dram_para para = {
 		.clk = CONFIG_DRAM_CLK,
 		.type = SUNXI_DRAM_TYPE_DDR3,
+		.dx_odt = CONFIG_DRAM_SUN50I_H616_DX_ODT,
+		.dx_dri = CONFIG_DRAM_SUN50I_H616_DX_DRI,
+		.ca_dri = CONFIG_DRAM_SUN50I_H616_CA_DRI,
 	};
 	unsigned long size;
 
diff --git a/configs/orangepi_zero2_defconfig b/configs/orangepi_zero2_defconfig
index 877eccf31bd6..ca398faef1d3 100644
--- a/configs/orangepi_zero2_defconfig
+++ b/configs/orangepi_zero2_defconfig
@@ -6,6 +6,9 @@ CONFIG_DRAM_SUN50I_H616_WRITE_LEVELING=y
 CONFIG_DRAM_SUN50I_H616_READ_CALIBRATION=y
 CONFIG_DRAM_SUN50I_H616_READ_TRAINING=y
 CONFIG_DRAM_SUN50I_H616_WRITE_TRAINING=y
+CONFIG_DRAM_SUN50I_H616_DX_ODT=0x8080808
+CONFIG_DRAM_SUN50I_H616_DX_DRI=0xe0e0e0e
+CONFIG_DRAM_SUN50I_H616_CA_DRI=0xe0e
 CONFIG_MACH_SUN50I_H616=y
 CONFIG_MMC0_CD_PIN="PF6"
 CONFIG_R_I2C_ENABLE=y
-- 
2.38.1


  parent reply	other threads:[~2022-12-11 16:33 UTC|newest]

Thread overview: 29+ messages / expand[flat|nested]  mbox.gz  Atom feed  top
2022-12-11 16:32 [PATCH 0/8] sunxi: Update H616 DRAM driver Jernej Skrabec
2022-12-11 16:32 ` [PATCH 1/8] sunxi: Fix write to H616 DRAM CR register Jernej Skrabec
2023-01-04  0:35   ` Andre Przywara
2022-12-11 16:32 ` [PATCH 2/8] sunxi: cosmetic: Fix H616 DRAM driver code style Jernej Skrabec
2023-01-04  0:36   ` Andre Przywara
2022-12-11 16:32 ` Jernej Skrabec [this message]
2023-01-04  0:36   ` [PATCH 3/8] sunxi: parameterize H616 DRAM ODT values Andre Przywara
2022-12-11 16:32 ` [PATCH 4/8] sunxi: Convert H616 DRAM options to single setting Jernej Skrabec
2022-12-12 17:50   ` Andre Przywara
2022-12-13 16:23     ` Jernej Škrabec
2022-12-13 16:51       ` Andre Przywara
2022-12-13 17:08         ` Jernej Škrabec
2022-12-11 16:32 ` [PATCH 5/8] sunxi: Always configure ODT on H616 DRAM Jernej Skrabec
2023-01-04  0:37   ` Andre Przywara
2023-01-04 21:12     ` Jernej Škrabec
2022-12-11 16:32 ` [PATCH 6/8] sunxi: Make bit delay function in H616 DRAM code void Jernej Skrabec
2023-01-04  0:37   ` Andre Przywara
2022-12-11 16:32 ` [PATCH 7/8] sunxi: Parameterize bit delay code in H616 DRAM driver Jernej Skrabec
2023-01-04  0:37   ` Andre Przywara
2023-01-04 21:28     ` Jernej Škrabec
2022-12-11 16:32 ` [PATCH 8/8] sunxi: Parameterize H616 DRAM code some more Jernej Skrabec
2022-12-11 18:33   ` Jernej Škrabec
2023-01-04  0:38   ` Andre Przywara
2023-01-04 21:30     ` Jernej Škrabec
2022-12-12  1:04 ` [PATCH 0/8] sunxi: Update H616 DRAM driver Andre Przywara
2022-12-12 16:14   ` Jernej Škrabec
2023-01-04  0:47 ` Andre Przywara
2023-01-04 21:02   ` Jernej Škrabec
2023-01-04 23:21     ` Andre Przywara

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