[PATCH 7/8] sunxi: Parameterize bit delay code in H616 DRAM driver

Jernej Skrabec
2022-12-11T16:34:24Z

These values are highly board specific and thus make sense to add
parameter for them. To ease adding support for new boards, let's make
them same as in vendor DRAM settings.

Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
---
.../include/asm/arch-sunxi/dram_sun50i_h616.h | 4 +
arch/arm/mach-sunxi/Kconfig | 18 ++
arch/arm/mach-sunxi/dram_sun50i_h616.c | 189 +++++++++++++-----
3 files changed, 162 insertions(+), 49 deletions(-)

diff --git a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
index b5140c79b70e..c7890c83391f 100644
--- a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
+++ b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
@@ -145,6 +145,7 @@ check_member(sunxi_mctl_ctl_reg, unk_0x4240, 0x4240);
#define TPR10_READ_CALIBRATION BIT(21)
#define TPR10_READ_TRAINING BIT(22)
#define TPR10_WRITE_TRAINING BIT(23)
+#define TPR10_UNKNOWN_FEAT3 BIT(30)

struct dram_para {
u32 clk;
@@ -156,7 +157,10 @@ struct dram_para {
u32 dx_odt;
u32 dx_dri;
u32 ca_dri;
+ u32 odt_en;
u32 tpr10;
+ u32 tpr11;
+ u32 tpr12;
};

diff --git a/arch/arm/mach-sunxi/Kconfig b/arch/arm/mach-sunxi/Kconfig
index 778304b77e26..b050f0a56971 100644
--- a/arch/arm/mach-sunxi/Kconfig
+++ b/arch/arm/mach-sunxi/Kconfig
@@ -67,11 +67,29 @@ config DRAM_SUN50I_H616_CA_DRI
help
CA DRI value from vendor DRAM settings.

+config DRAM_SUN50I_H616_ODT_EN
+ hex "H616 DRAM ODT EN parameter"
+ default 0x1
+ help
+ ODT EN value from vendor DRAM settings.
+
config DRAM_SUN50I_H616_TPR10
hex "H616 DRAM TPR10 parameter"
help
TPR10 value from vendor DRAM settings. It tells which features
should be configured, like write leveling, read calibration, etc.
+
+config DRAM_SUN50I_H616_TPR11
+ hex "H616 DRAM TPR11 parameter"
+ default 0x0
+ help
+ TPR11 value from vendor DRAM settings.
+
+config DRAM_SUN50I_H616_TPR12
+ hex "H616 DRAM TPR12 parameter"
+ default 0x0
+ help
+ TPR12 value from vendor DRAM settings.
endif

config SUN6I_PRCM
diff --git a/arch/arm/mach-sunxi/dram_sun50i_h616.c b/arch/arm/mach-sunxi/dram_sun50i_h616.c
index 3b2ba168498c..df06cea42464 100644
--- a/arch/arm/mach-sunxi/dram_sun50i_h616.c
+++ b/arch/arm/mach-sunxi/dram_sun50i_h616.c
@@ -574,7 +574,7 @@ static bool mctl_phy_write_training(struct dram_para *para)

static void mctl_phy_bit_delay_compensation(struct dram_para *para)
{
- u32 *ptr;
+ u32 *ptr, val;
int i;

if (para->tpr10 & TPR10_UNKNOWN_FEAT2) {
@@ -582,49 +582,93 @@ static void mctl_phy_bit_delay_compensation(struct dram_para *para)
setbits_le32(SUNXI_DRAM_PHY0_BASE + 8, 8);
clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 0x10);

+ if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
+ val = para->tpr11 & 0x3f;
+ else
+ val = (para->tpr11 & 0xf) << 1;
+
ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x484);
for (i = 0; i < 9; i++) {
- writel_relaxed(0x16, ptr);
- writel_relaxed(0x16, ptr + 0x30);
+ writel_relaxed(val, ptr);
+ writel_relaxed(val, ptr + 0x30);
ptr += 2;
}
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4d0);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x590);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4cc);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x58c);
+
+ if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
+ val = (para->odt_en >> 15) & 0x1e;
+ else
+ val = (para->tpr11 >> 15) & 0x1e;
+
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x4d0);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x590);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x4cc);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x58c);
+
+ if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
+ val = (para->tpr11 >> 8) & 0x3f;
+ else
+ val = (para->tpr11 >> 3) & 0x1e;

ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d8);
for (i = 0; i < 9; i++) {
- writel_relaxed(0x1a, ptr);
- writel_relaxed(0x1a, ptr + 0x30);
+ writel_relaxed(val, ptr);
+ writel_relaxed(val, ptr + 0x30);
ptr += 2;
}
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x524);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e4);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x520);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e0);
+
+ if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
+ val = (para->odt_en >> 19) & 0x1e;
+ else
+ val = (para->tpr11 >> 19) & 0x1e;
+
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x524);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5e4);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x520);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5e0);
+
+ if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
+ val = (para->tpr11 >> 16) & 0x3f;
+ else
+ val = (para->tpr11 >> 7) & 0x1e;

ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x604);
for (i = 0; i < 9; i++) {
- writel_relaxed(0x1a, ptr);
- writel_relaxed(0x1a, ptr + 0x30);
+ writel_relaxed(val, ptr);
+ writel_relaxed(val, ptr + 0x30);
ptr += 2;
}
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x650);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x710);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x64c);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x70c);
+
+ if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
+ val = (para->odt_en >> 23) & 0x1e;
+ else
+ val = (para->tpr11 >> 23) & 0x1e;
+
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x650);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x710);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x64c);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x70c);
+
+ if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
+ val = (para->tpr11 >> 24) & 0x3f;
+ else
+ val = (para->tpr11 >> 11) & 0x1e;

ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x658);
for (i = 0; i < 9; i++) {
- writel_relaxed(0x1a, ptr);
- writel_relaxed(0x1a, ptr + 0x30);
+ writel_relaxed(val, ptr);
+ writel_relaxed(val, ptr + 0x30);
ptr += 2;
}
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a4);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x764);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a0);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x760);
+
+ if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
+ val = (para->odt_en >> 27) & 0x1e;
+ else
+ val = (para->tpr11 >> 27) & 0x1e;
+
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x6a4);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x764);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x6a0);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x760);

dmb();

@@ -635,49 +679,93 @@ static void mctl_phy_bit_delay_compensation(struct dram_para *para)
clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80);
clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 4);

+ if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
+ val = para->tpr12 & 0x3f;
+ else
+ val = (para->tpr12 & 0xf) << 1;
+
ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x480);
for (i = 0; i < 9; i++) {
- writel_relaxed(0x10, ptr);
- writel_relaxed(0x10, ptr + 0x30);
+ writel_relaxed(val, ptr);
+ writel_relaxed(val, ptr + 0x30);
ptr += 2;
}
- writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x528);
- writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x5e8);
- writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x4c8);
- writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x588);
+
+ if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
+ val = (para->odt_en << 1) & 0x1e;
+ else
+ val = (para->tpr12 >> 15) & 0x1e;
+
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x528);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5e8);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x4c8);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x588);
+
+ if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
+ val = (para->tpr12 >> 8) & 0x3f;
+ else
+ val = (para->tpr12 >> 3) & 0x1e;

ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d4);
for (i = 0; i < 9; i++) {
- writel_relaxed(0x12, ptr);
- writel_relaxed(0x12, ptr + 0x30);
+ writel_relaxed(val, ptr);
+ writel_relaxed(val, ptr + 0x30);
ptr += 2;
}
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x52c);
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5ec);
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x51c);
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5dc);
+
+ if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
+ val = (para->odt_en >> 3) & 0x1e;
+ else
+ val = (para->tpr12 >> 19) & 0x1e;
+
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x52c);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5ec);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x51c);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5dc);
+
+ if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
+ val = (para->tpr12 >> 16) & 0x3f;
+ else
+ val = (para->tpr12 >> 7) & 0x1e;

ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x600);
for (i = 0; i < 9; i++) {
- writel_relaxed(0x12, ptr);
- writel_relaxed(0x12, ptr + 0x30);
+ writel_relaxed(val, ptr);
+ writel_relaxed(val, ptr + 0x30);
ptr += 2;
}
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x6a8);
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x768);
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x648);
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x708);
+
+ if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
+ val = (para->odt_en >> 7) & 0x1e;
+ else
+ val = (para->tpr12 >> 23) & 0x1e;
+
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x6a8);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x768);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x648);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x708);
+
+ if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
+ val = (para->tpr12 >> 24) & 0x3f;
+ else
+ val = (para->tpr12 >> 11) & 0x1e;

ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x654);
for (i = 0; i < 9; i++) {
- writel_relaxed(0x14, ptr);
- writel_relaxed(0x14, ptr + 0x30);
+ writel_relaxed(val, ptr);
+ writel_relaxed(val, ptr + 0x30);
ptr += 2;
}
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x6ac);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x76c);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x69c);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x75c);
+
+ if (para->tpr10 & TPR10_UNKNOWN_FEAT3)
+ val = (para->odt_en >> 11) & 0x1e;
+ else
+ val = (para->tpr12 >> 27) & 0x1e;
+
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x6ac);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x76c);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x69c);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x75c);

dmb();

@@ -1021,7 +1109,10 @@ unsigned long sunxi_dram_init(void)
.dx_odt = CONFIG_DRAM_SUN50I_H616_DX_ODT,
.dx_dri = CONFIG_DRAM_SUN50I_H616_DX_DRI,
.ca_dri = CONFIG_DRAM_SUN50I_H616_CA_DRI,
+ .odt_en = CONFIG_DRAM_SUN50I_H616_ODT_EN,
.tpr10 = CONFIG_DRAM_SUN50I_H616_TPR10,
+ .tpr11 = CONFIG_DRAM_SUN50I_H616_TPR11,
+ .tpr12 = CONFIG_DRAM_SUN50I_H616_TPR12,
};
unsigned long size;

--
2.38.1