public inbox for u-boot@lists.denx.de
 help / color / mirror / Atom feed
From: Andre Przywara <andre.przywara@arm.com>
To: Jernej Skrabec <jernej.skrabec@gmail.com>
Cc: jagan@amarulasolutions.com, u-boot@lists.denx.de
Subject: Re: [PATCH 3/8] sunxi: parameterize H616 DRAM ODT values
Date: Wed, 4 Jan 2023 00:36:41 +0000	[thread overview]
Message-ID: <20230104003641.0683c235@slackpad.lan> (raw)
In-Reply-To: <20221211163213.98540-4-jernej.skrabec@gmail.com>

On Sun, 11 Dec 2022 17:32:08 +0100
Jernej Skrabec <jernej.skrabec@gmail.com> wrote:

Hi Jernej,

> While ODT values for same memory type are similar, they are not
> necessary the same. Let's parameterize them and make parameter same as
> in vendor DRAM settings. That way it will be easy to introduce new board
> support.

checked that this results in the same parameters to writel().
One small thing below:

> 
> Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
> ---
>  .../include/asm/arch-sunxi/dram_sun50i_h616.h |  3 +
>  arch/arm/mach-sunxi/Kconfig                   | 15 +++++
>  arch/arm/mach-sunxi/dram_sun50i_h616.c        | 59 ++++++++++++-------
>  configs/orangepi_zero2_defconfig              |  3 +
>  4 files changed, 58 insertions(+), 22 deletions(-)
> 
> diff --git a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
> index 134679d55205..c9e1f84bfcdd 100644
> --- a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
> +++ b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
> @@ -144,6 +144,9 @@ struct dram_para {
>  	u8 rows;
>  	u8 ranks;
>  	u8 bus_full_width;
> +	u32 dx_odt;
> +	u32 dx_dri;
> +	u32 ca_dri;
>  };
>  
>  
> diff --git a/arch/arm/mach-sunxi/Kconfig b/arch/arm/mach-sunxi/Kconfig
> index dbe6005daab1..cad53f19912c 100644
> --- a/arch/arm/mach-sunxi/Kconfig
> +++ b/arch/arm/mach-sunxi/Kconfig
> @@ -83,6 +83,21 @@ config DRAM_SUN50I_H616_UNKNOWN_FEATURE
>  	---help---
>  	  Select this when DRAM on your H616 board needs this unknown
>  	  feature.
> +
> +config DRAM_SUN50I_H616_DX_ODT
> +	hex "H616 DRAM DX ODT parameter"
> +	help
> +	  DX ODT value from vendor DRAM settings.
> +
> +config DRAM_SUN50I_H616_DX_DRI
> +	hex "H616 DRAM DX DRI parameter"
> +	help
> +	  DX DRI value from vendor DRAM settings.
> +
> +config DRAM_SUN50I_H616_CA_DRI
> +	hex "H616 DRAM CA DRI parameter"
> +	help
> +	  CA DRI value from vendor DRAM settings.
>  endif
>  
>  config SUN6I_PRCM
> diff --git a/arch/arm/mach-sunxi/dram_sun50i_h616.c b/arch/arm/mach-sunxi/dram_sun50i_h616.c
> index 49983bf7a1b8..06a07dfbf9cc 100644
> --- a/arch/arm/mach-sunxi/dram_sun50i_h616.c
> +++ b/arch/arm/mach-sunxi/dram_sun50i_h616.c
> @@ -234,37 +234,49 @@ static const u8 phy_init[] = {
>  	0x09, 0x05, 0x18
>  };
>  
> -static void mctl_phy_configure_odt(void)
> +static void mctl_phy_configure_odt(struct dram_para *para)
>  {
> -	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x388);
> -	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x38c);
> +	unsigned int val;
>  
> -	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x3c8);
> -	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x3cc);
> +	val = para->dx_dri & 0x1f;
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x388);
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x38c);
>  
> -	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x408);
> -	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x40c);
> +	val = (para->dx_dri >> 8) & 0x1f;
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x3c8);
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x3cc);
>  
> -	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x448);
> -	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x44c);
> +	val = (para->dx_dri >> 16) & 0x1f;
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x408);
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x40c);
>  
> -	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x340);
> -	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x344);
> +	val = (para->dx_dri >> 24) & 0x1f;
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x448);
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x44c);
>  
> -	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x348);
> -	writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x34c);
> +	val = para->ca_dri & 0x1f;
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x340);
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x344);
>  
> -	writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x380);
> -	writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x384);
> +	val = (para->ca_dri >> 8) & 0x1f;
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x348);
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x34c);
>  
> -	writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x3c0);
> -	writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x3c4);
> +	val = para->dx_odt & 0x1f;
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x380);
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x384);
>  
> -	writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x400);
> -	writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x404);
> +	val = (para->dx_odt >> 8) & 0x1f;
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x3c0);
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x3c4);
>  
> -	writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x440);
> -	writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x444);
> +	val = (para->dx_odt >> 16) & 0x1f;
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x400);
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x404);
> +
> +	val = (para->dx_odt >> 24) & 0x1f;
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x440);
> +	writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x444);
>  
>  	dmb();
>  }
> @@ -722,7 +734,7 @@ static bool mctl_phy_init(struct dram_para *para)
>  	writel(0x80, SUNXI_DRAM_PHY0_BASE + 0x45c);
>  
>  	if (IS_ENABLED(CONFIG_DRAM_ODT_EN))
> -		mctl_phy_configure_odt();
> +		mctl_phy_configure_odt(para);
>  
>  	clrsetbits_le32(SUNXI_DRAM_PHY0_BASE + 4, 7, 0xa);
>  
> @@ -1007,6 +1019,9 @@ unsigned long sunxi_dram_init(void)
>  	struct dram_para para = {
>  		.clk = CONFIG_DRAM_CLK,
>  		.type = SUNXI_DRAM_TYPE_DDR3,
> +		.dx_odt = CONFIG_DRAM_SUN50I_H616_DX_ODT,
> +		.dx_dri = CONFIG_DRAM_SUN50I_H616_DX_DRI,
> +		.ca_dri = CONFIG_DRAM_SUN50I_H616_CA_DRI,
>  	};
>  	unsigned long size;
>  
> diff --git a/configs/orangepi_zero2_defconfig b/configs/orangepi_zero2_defconfig
> index 877eccf31bd6..ca398faef1d3 100644
> --- a/configs/orangepi_zero2_defconfig
> +++ b/configs/orangepi_zero2_defconfig
> @@ -6,6 +6,9 @@ CONFIG_DRAM_SUN50I_H616_WRITE_LEVELING=y
>  CONFIG_DRAM_SUN50I_H616_READ_CALIBRATION=y
>  CONFIG_DRAM_SUN50I_H616_READ_TRAINING=y
>  CONFIG_DRAM_SUN50I_H616_WRITE_TRAINING=y
> +CONFIG_DRAM_SUN50I_H616_DX_ODT=0x8080808
> +CONFIG_DRAM_SUN50I_H616_DX_DRI=0xe0e0e0e
> +CONFIG_DRAM_SUN50I_H616_CA_DRI=0xe0e

Can you make those values 8 nibbles and 4 nibbles long (so starting
with a 0)? It's somewhat confusing to read like this, it *looks* like a
32-bit value, but it's actually only 28 bits wide. This gets confusing
when matching up values against dumps or a hex editor.

With that fixed:
Reviewed-by: Andre Przywara <andre.przywara@arm.com>

Cheers,
Andre

>  CONFIG_MACH_SUN50I_H616=y
>  CONFIG_MMC0_CD_PIN="PF6"
>  CONFIG_R_I2C_ENABLE=y


  reply	other threads:[~2023-01-04  0:41 UTC|newest]

Thread overview: 29+ messages / expand[flat|nested]  mbox.gz  Atom feed  top
2022-12-11 16:32 [PATCH 0/8] sunxi: Update H616 DRAM driver Jernej Skrabec
2022-12-11 16:32 ` [PATCH 1/8] sunxi: Fix write to H616 DRAM CR register Jernej Skrabec
2023-01-04  0:35   ` Andre Przywara
2022-12-11 16:32 ` [PATCH 2/8] sunxi: cosmetic: Fix H616 DRAM driver code style Jernej Skrabec
2023-01-04  0:36   ` Andre Przywara
2022-12-11 16:32 ` [PATCH 3/8] sunxi: parameterize H616 DRAM ODT values Jernej Skrabec
2023-01-04  0:36   ` Andre Przywara [this message]
2022-12-11 16:32 ` [PATCH 4/8] sunxi: Convert H616 DRAM options to single setting Jernej Skrabec
2022-12-12 17:50   ` Andre Przywara
2022-12-13 16:23     ` Jernej Škrabec
2022-12-13 16:51       ` Andre Przywara
2022-12-13 17:08         ` Jernej Škrabec
2022-12-11 16:32 ` [PATCH 5/8] sunxi: Always configure ODT on H616 DRAM Jernej Skrabec
2023-01-04  0:37   ` Andre Przywara
2023-01-04 21:12     ` Jernej Škrabec
2022-12-11 16:32 ` [PATCH 6/8] sunxi: Make bit delay function in H616 DRAM code void Jernej Skrabec
2023-01-04  0:37   ` Andre Przywara
2022-12-11 16:32 ` [PATCH 7/8] sunxi: Parameterize bit delay code in H616 DRAM driver Jernej Skrabec
2023-01-04  0:37   ` Andre Przywara
2023-01-04 21:28     ` Jernej Škrabec
2022-12-11 16:32 ` [PATCH 8/8] sunxi: Parameterize H616 DRAM code some more Jernej Skrabec
2022-12-11 18:33   ` Jernej Škrabec
2023-01-04  0:38   ` Andre Przywara
2023-01-04 21:30     ` Jernej Škrabec
2022-12-12  1:04 ` [PATCH 0/8] sunxi: Update H616 DRAM driver Andre Przywara
2022-12-12 16:14   ` Jernej Škrabec
2023-01-04  0:47 ` Andre Przywara
2023-01-04 21:02   ` Jernej Škrabec
2023-01-04 23:21     ` Andre Przywara

Reply instructions:

You may reply publicly to this message via plain-text email
using any one of the following methods:

* Save the following mbox file, import it into your mail client,
  and reply-to-all from there: mbox

  Avoid top-posting and favor interleaved quoting:
  https://en.wikipedia.org/wiki/Posting_style#Interleaved_style

* Reply using the --to, --cc, and --in-reply-to
  switches of git-send-email(1):

  git send-email \
    --in-reply-to=20230104003641.0683c235@slackpad.lan \
    --to=andre.przywara@arm.com \
    --cc=jagan@amarulasolutions.com \
    --cc=jernej.skrabec@gmail.com \
    --cc=u-boot@lists.denx.de \
    /path/to/YOUR_REPLY

  https://kernel.org/pub/software/scm/git/docs/git-send-email.html

* If your mail client supports setting the In-Reply-To header
  via mailto: links, try the mailto: link
Be sure your reply has a Subject: header at the top and a blank line before the message body.
This is a public inbox, see mirroring instructions
for how to clone and mirror all data and code used for this inbox