From: Jernej Skrabec <jernej.skrabec@gmail.com>
To: andre.przywara@arm.com
Cc: jagan@amarulasolutions.com, u-boot@lists.denx.de,
linux-sunxi@lists.linux.dev,
Jernej Skrabec <jernej.skrabec@gmail.com>
Subject: [PATCH v2 04/10] sunxi: Convert H616 DRAM options to single setting
Date: Mon, 10 Apr 2023 10:21:13 +0200 [thread overview]
Message-ID: <20230410082119.24616-5-jernej.skrabec@gmail.com> (raw)
In-Reply-To: <20230410082119.24616-1-jernej.skrabec@gmail.com>
Vendor DRAM settings use TPR10 parameter to enable various features.
There are many mores features that just those that are currently
mentioned. Since new will be added later and most are not known, let's
reuse value from vendor DRAM driver as-is. This will also help adding
support for new boards.
Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
---
.../include/asm/arch-sunxi/dram_sun50i_h616.h | 9 +
arch/arm/mach-sunxi/Kconfig | 38 +---
arch/arm/mach-sunxi/dram_sun50i_h616.c | 197 +++++++++---------
configs/orangepi_zero2_defconfig | 5 +-
configs/x96_mate_defconfig | 1 +
5 files changed, 117 insertions(+), 133 deletions(-)
diff --git a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
index c9e1f84bfcdd..dbdc6b694ec1 100644
--- a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
+++ b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
@@ -137,6 +137,14 @@ check_member(sunxi_mctl_ctl_reg, unk_0x4240, 0x4240);
#define MSTR_ACTIVE_RANKS(x) (((x == 2) ? 3 : 1) << 24)
#define MSTR_BURST_LENGTH(x) (((x) >> 1) << 16)
+#define TPR10_CA_BIT_DELAY BIT(16)
+#define TPR10_DX_BIT_DELAY0 BIT(17)
+#define TPR10_DX_BIT_DELAY1 BIT(18)
+#define TPR10_WRITE_LEVELING BIT(20)
+#define TPR10_READ_CALIBRATION BIT(21)
+#define TPR10_READ_TRAINING BIT(22)
+#define TPR10_WRITE_TRAINING BIT(23)
+
struct dram_para {
u32 clk;
enum sunxi_dram_type type;
@@ -147,6 +155,7 @@ struct dram_para {
u32 dx_odt;
u32 dx_dri;
u32 ca_dri;
+ u32 tpr10;
};
diff --git a/arch/arm/mach-sunxi/Kconfig b/arch/arm/mach-sunxi/Kconfig
index 14fb9a95905a..1b47a49f938c 100644
--- a/arch/arm/mach-sunxi/Kconfig
+++ b/arch/arm/mach-sunxi/Kconfig
@@ -52,38 +52,6 @@ config DRAM_SUN50I_H616
like H616.
if DRAM_SUN50I_H616
-config DRAM_SUN50I_H616_WRITE_LEVELING
- bool "H616 DRAM write leveling"
- ---help---
- Select this when DRAM on your H616 board needs write leveling.
-
-config DRAM_SUN50I_H616_READ_CALIBRATION
- bool "H616 DRAM read calibration"
- ---help---
- Select this when DRAM on your H616 board needs read calibration.
-
-config DRAM_SUN50I_H616_READ_TRAINING
- bool "H616 DRAM read training"
- ---help---
- Select this when DRAM on your H616 board needs read training.
-
-config DRAM_SUN50I_H616_WRITE_TRAINING
- bool "H616 DRAM write training"
- ---help---
- Select this when DRAM on your H616 board needs write training.
-
-config DRAM_SUN50I_H616_BIT_DELAY_COMPENSATION
- bool "H616 DRAM bit delay compensation"
- ---help---
- Select this when DRAM on your H616 board needs bit delay
- compensation.
-
-config DRAM_SUN50I_H616_UNKNOWN_FEATURE
- bool "H616 DRAM unknown feature"
- ---help---
- Select this when DRAM on your H616 board needs this unknown
- feature.
-
config DRAM_SUN50I_H616_DX_ODT
hex "H616 DRAM DX ODT parameter"
help
@@ -98,6 +66,12 @@ config DRAM_SUN50I_H616_CA_DRI
hex "H616 DRAM CA DRI parameter"
help
CA DRI value from vendor DRAM settings.
+
+config DRAM_SUN50I_H616_TPR10
+ hex "H616 DRAM TPR10 parameter"
+ help
+ TPR10 value from vendor DRAM settings. It tells which features
+ should be configured, like write leveling, read calibration, etc.
endif
config SUN6I_PRCM
diff --git a/arch/arm/mach-sunxi/dram_sun50i_h616.c b/arch/arm/mach-sunxi/dram_sun50i_h616.c
index 06a07dfbf9cc..630c7c3be882 100644
--- a/arch/arm/mach-sunxi/dram_sun50i_h616.c
+++ b/arch/arm/mach-sunxi/dram_sun50i_h616.c
@@ -577,109 +577,112 @@ static bool mctl_phy_bit_delay_compensation(struct dram_para *para)
u32 *ptr;
int i;
- clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 1);
- setbits_le32(SUNXI_DRAM_PHY0_BASE + 8, 8);
- clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 0x10);
+ if (para->tpr10 & TPR10_DX_BIT_DELAY1) {
+ clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 1);
+ setbits_le32(SUNXI_DRAM_PHY0_BASE + 8, 8);
+ clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 0x10);
- ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x484);
- for (i = 0; i < 9; i++) {
- writel_relaxed(0x16, ptr);
- writel_relaxed(0x16, ptr + 0x30);
- ptr += 2;
- }
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4d0);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x590);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4cc);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x58c);
+ ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x484);
+ for (i = 0; i < 9; i++) {
+ writel_relaxed(0x16, ptr);
+ writel_relaxed(0x16, ptr + 0x30);
+ ptr += 2;
+ }
+ writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4d0);
+ writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x590);
+ writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4cc);
+ writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x58c);
- ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d8);
- for (i = 0; i < 9; i++) {
- writel_relaxed(0x1a, ptr);
- writel_relaxed(0x1a, ptr + 0x30);
- ptr += 2;
- }
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x524);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e4);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x520);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e0);
+ ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d8);
+ for (i = 0; i < 9; i++) {
+ writel_relaxed(0x1a, ptr);
+ writel_relaxed(0x1a, ptr + 0x30);
+ ptr += 2;
+ }
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x524);
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e4);
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x520);
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e0);
- ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x604);
- for (i = 0; i < 9; i++) {
- writel_relaxed(0x1a, ptr);
- writel_relaxed(0x1a, ptr + 0x30);
- ptr += 2;
- }
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x650);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x710);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x64c);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x70c);
+ ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x604);
+ for (i = 0; i < 9; i++) {
+ writel_relaxed(0x1a, ptr);
+ writel_relaxed(0x1a, ptr + 0x30);
+ ptr += 2;
+ }
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x650);
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x710);
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x64c);
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x70c);
- ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x658);
- for (i = 0; i < 9; i++) {
- writel_relaxed(0x1a, ptr);
- writel_relaxed(0x1a, ptr + 0x30);
- ptr += 2;
- }
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a4);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x764);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a0);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x760);
+ ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x658);
+ for (i = 0; i < 9; i++) {
+ writel_relaxed(0x1a, ptr);
+ writel_relaxed(0x1a, ptr + 0x30);
+ ptr += 2;
+ }
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a4);
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x764);
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a0);
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x760);
- dmb();
+ dmb();
- setbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 1);
+ setbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 1);
+ }
- /* second part */
- clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80);
- clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 4);
+ if (para->tpr10 & TPR10_DX_BIT_DELAY0) {
+ clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80);
+ clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 4);
- ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x480);
- for (i = 0; i < 9; i++) {
- writel_relaxed(0x10, ptr);
- writel_relaxed(0x10, ptr + 0x30);
- ptr += 2;
- }
- writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x528);
- writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x5e8);
- writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x4c8);
- writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x588);
+ ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x480);
+ for (i = 0; i < 9; i++) {
+ writel_relaxed(0x10, ptr);
+ writel_relaxed(0x10, ptr + 0x30);
+ ptr += 2;
+ }
+ writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x528);
+ writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x5e8);
+ writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x4c8);
+ writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x588);
- ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d4);
- for (i = 0; i < 9; i++) {
- writel_relaxed(0x12, ptr);
- writel_relaxed(0x12, ptr + 0x30);
- ptr += 2;
- }
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x52c);
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5ec);
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x51c);
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5dc);
+ ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d4);
+ for (i = 0; i < 9; i++) {
+ writel_relaxed(0x12, ptr);
+ writel_relaxed(0x12, ptr + 0x30);
+ ptr += 2;
+ }
+ writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x52c);
+ writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5ec);
+ writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x51c);
+ writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5dc);
- ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x600);
- for (i = 0; i < 9; i++) {
- writel_relaxed(0x12, ptr);
- writel_relaxed(0x12, ptr + 0x30);
- ptr += 2;
- }
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x6a8);
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x768);
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x648);
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x708);
+ ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x600);
+ for (i = 0; i < 9; i++) {
+ writel_relaxed(0x12, ptr);
+ writel_relaxed(0x12, ptr + 0x30);
+ ptr += 2;
+ }
+ writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x6a8);
+ writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x768);
+ writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x648);
+ writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x708);
- ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x654);
- for (i = 0; i < 9; i++) {
- writel_relaxed(0x14, ptr);
- writel_relaxed(0x14, ptr + 0x30);
- ptr += 2;
- }
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x6ac);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x76c);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x69c);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x75c);
+ ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x654);
+ for (i = 0; i < 9; i++) {
+ writel_relaxed(0x14, ptr);
+ writel_relaxed(0x14, ptr + 0x30);
+ ptr += 2;
+ }
+ writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x6ac);
+ writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x76c);
+ writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x69c);
+ writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x75c);
- dmb();
+ dmb();
- setbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80);
+ setbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80);
+ }
return true;
}
@@ -718,7 +721,7 @@ static bool mctl_phy_init(struct dram_para *para)
for (i = 0; i < ARRAY_SIZE(phy_init); i++)
writel(phy_init[i], &ptr[i]);
- if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_UNKNOWN_FEATURE)) {
+ if (para->tpr10 & TPR10_CA_BIT_DELAY) {
ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x780);
for (i = 0; i < 32; i++)
writel(0x16, &ptr[i]);
@@ -800,7 +803,7 @@ static bool mctl_phy_init(struct dram_para *para)
clrbits_le32(&mctl_ctl->rfshctl3, 1);
writel(1, &mctl_ctl->swctl);
- if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_WRITE_LEVELING)) {
+ if (para->tpr10 & TPR10_WRITE_LEVELING) {
for (i = 0; i < 5; i++)
if (mctl_phy_write_leveling(para))
break;
@@ -810,7 +813,7 @@ static bool mctl_phy_init(struct dram_para *para)
}
}
- if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_READ_CALIBRATION)) {
+ if (para->tpr10 & TPR10_READ_CALIBRATION) {
for (i = 0; i < 5; i++)
if (mctl_phy_read_calibration(para))
break;
@@ -820,7 +823,7 @@ static bool mctl_phy_init(struct dram_para *para)
}
}
- if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_READ_TRAINING)) {
+ if (para->tpr10 & TPR10_READ_TRAINING) {
for (i = 0; i < 5; i++)
if (mctl_phy_read_training(para))
break;
@@ -830,7 +833,7 @@ static bool mctl_phy_init(struct dram_para *para)
}
}
- if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_WRITE_TRAINING)) {
+ if (para->tpr10 & TPR10_WRITE_TRAINING) {
for (i = 0; i < 5; i++)
if (mctl_phy_write_training(para))
break;
@@ -840,8 +843,7 @@ static bool mctl_phy_init(struct dram_para *para)
}
}
- if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_BIT_DELAY_COMPENSATION))
- mctl_phy_bit_delay_compensation(para);
+ mctl_phy_bit_delay_compensation(para);
clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 4);
@@ -1022,6 +1024,7 @@ unsigned long sunxi_dram_init(void)
.dx_odt = CONFIG_DRAM_SUN50I_H616_DX_ODT,
.dx_dri = CONFIG_DRAM_SUN50I_H616_DX_DRI,
.ca_dri = CONFIG_DRAM_SUN50I_H616_CA_DRI,
+ .tpr10 = CONFIG_DRAM_SUN50I_H616_TPR10,
};
unsigned long size;
diff --git a/configs/orangepi_zero2_defconfig b/configs/orangepi_zero2_defconfig
index d70b15a07705..6cb942f511a1 100644
--- a/configs/orangepi_zero2_defconfig
+++ b/configs/orangepi_zero2_defconfig
@@ -2,13 +2,10 @@ CONFIG_ARM=y
CONFIG_ARCH_SUNXI=y
CONFIG_DEFAULT_DEVICE_TREE="sun50i-h616-orangepi-zero2"
CONFIG_SPL=y
-CONFIG_DRAM_SUN50I_H616_WRITE_LEVELING=y
-CONFIG_DRAM_SUN50I_H616_READ_CALIBRATION=y
-CONFIG_DRAM_SUN50I_H616_READ_TRAINING=y
-CONFIG_DRAM_SUN50I_H616_WRITE_TRAINING=y
CONFIG_DRAM_SUN50I_H616_DX_ODT=0x08080808
CONFIG_DRAM_SUN50I_H616_DX_DRI=0x0e0e0e0e
CONFIG_DRAM_SUN50I_H616_CA_DRI=0x0e0e
+CONFIG_DRAM_SUN50I_H616_TPR10=0xf83438
CONFIG_MACH_SUN50I_H616=y
CONFIG_R_I2C_ENABLE=y
CONFIG_SPL_SPI_SUNXI=y
diff --git a/configs/x96_mate_defconfig b/configs/x96_mate_defconfig
index 60cc8fbe751c..b00daa458b28 100644
--- a/configs/x96_mate_defconfig
+++ b/configs/x96_mate_defconfig
@@ -6,6 +6,7 @@ CONFIG_DRAM_SUN50I_H616_READ_CALIBRATION=y
CONFIG_DRAM_SUN50I_H616_DX_ODT=0x03030303
CONFIG_DRAM_SUN50I_H616_DX_DRI=0x0e0e0e0e
CONFIG_DRAM_SUN50I_H616_CA_DRI=0x1c12
+CONFIG_DRAM_SUN50I_H616_TPR10=0x2f0007
CONFIG_MACH_SUN50I_H616=y
CONFIG_R_I2C_ENABLE=y
# CONFIG_SYS_MALLOC_CLEAR_ON_INIT is not set
--
2.40.0
next prev parent reply other threads:[~2023-04-10 8:27 UTC|newest]
Thread overview: 19+ messages / expand[flat|nested] mbox.gz Atom feed top
2023-04-10 8:21 [PATCH v2 00/10] sunxi: Update H616 DRAM driver Jernej Skrabec
2023-04-10 8:21 ` [PATCH v2 01/10] sunxi: Fix write to H616 DRAM CR register Jernej Skrabec
2023-04-10 8:21 ` [PATCH v2 02/10] sunxi: cosmetic: Fix H616 DRAM driver code style Jernej Skrabec
2023-04-10 8:21 ` [PATCH v2 03/10] sunxi: parameterize H616 DRAM ODT values Jernej Skrabec
2023-04-10 8:21 ` Jernej Skrabec [this message]
2023-04-11 10:13 ` [PATCH v2 04/10] sunxi: Convert H616 DRAM options to single setting Andre Przywara
2023-04-12 5:05 ` Jernej Škrabec
2023-04-10 8:21 ` [PATCH v2 05/10] sunxi: Always configure ODT on H616 DRAM Jernej Skrabec
2023-04-11 10:13 ` Andre Przywara
2023-04-10 8:21 ` [PATCH v2 06/10] sunxi: Make bit delay function in H616 DRAM code void Jernej Skrabec
2023-04-10 8:21 ` [PATCH v2 07/10] sunxi: Parameterize bit delay code in H616 DRAM driver Jernej Skrabec
2023-04-11 10:14 ` Andre Przywara
2023-04-10 8:21 ` [PATCH v2 08/10] sunxi: Parameterize "unknown feature" " Jernej Skrabec
2023-04-11 10:14 ` Andre Przywara
2023-04-10 8:21 ` [PATCH v2 09/10] sunxi: Parameterize some of H616 DDR3 timings Jernej Skrabec
2023-04-11 10:14 ` Andre Przywara
2023-04-10 8:21 ` [PATCH v2 10/10] sunxi: Add TPR2 parameter for H616 DRAM driver Jernej Skrabec
2023-04-11 10:15 ` Andre Przywara
2023-04-11 10:19 ` [PATCH v2 00/10] sunxi: Update " Andre Przywara
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