Re: [PATCH 3/4] dt-bindings: hwmon: Add max-expected-current property to ina2xx

[Jonathan Cameron <jic23@kernel.org>]

On Thu, 28 Sep 2017 14:50:14 +0200
Maciej Purski <m.purski@samsung.com> wrote:

> Add optional max expected current property which allows calibrating
> the ina sensor in order to achieve requested precision. Document
> the changes in Documentation/hwmon/ina2xx.
> 

This is introducing new generic devicetree bindings..  
I'm not totally sure we want to do this rather than having a
manufacturer specific binding...  I don't have a good feeling for
how common this will be in other devices.

If it's generic, then this isn't necessarily the place to define it.

Jonathan

> Signed-off-by: Maciej Purski <m.purski@samsung.com>
> ---
>  Documentation/devicetree/bindings/hwmon/ina2xx.txt | 4 +++-
>  Documentation/hwmon/ina2xx                         | 9 +++++----
>  2 files changed, 8 insertions(+), 5 deletions(-)
> 
> diff --git a/Documentation/devicetree/bindings/hwmon/ina2xx.txt b/Documentation/devicetree/bindings/hwmon/ina2xx.txt
> index 02af0d9..25ba372 100644
> --- a/Documentation/devicetree/bindings/hwmon/ina2xx.txt
> +++ b/Documentation/devicetree/bindings/hwmon/ina2xx.txt
> @@ -14,11 +14,13 @@ Optional properties:
>  
>  - shunt-resistor
>  	Shunt resistor value in micro-Ohm
> -
> +- max-expected-current
> +	Max expected current value in mA
>  Example:
>  
>  ina220@44 {
>  	compatible = "ti,ina220";
>  	reg = <0x44>;
>  	shunt-resistor = <1000>;
> +	max-expected-current = <3000>;
>  };
> diff --git a/Documentation/hwmon/ina2xx b/Documentation/hwmon/ina2xx
> index cfd31d9..e9ca838 100644
> --- a/Documentation/hwmon/ina2xx
> +++ b/Documentation/hwmon/ina2xx
> @@ -51,10 +51,11 @@ INA230 and INA231 are high or low side current shunt and power monitors
>  with an I2C interface. The chips monitor both a shunt voltage drop and
>  bus supply voltage.
>  
> -The shunt value in micro-ohms can be set via platform data or device tree at
> -compile-time or via the shunt_resistor attribute in sysfs at run-time. Please
> -refer to the Documentation/devicetree/bindings/i2c/ina2xx.txt for bindings
> -if the device tree is used.
> +The shunt value in micro-ohms and max expected current in mA can be set
> +via platform data or device tree at compile-time or via the shunt_resistor
> +and max_expected_current attributes in sysfs at run-time. Please refer to the
> +Documentation/devicetree/bindings/i2c/ina2xx.txt for bindings if the
> +device tree is used.
>  
>  Additionally ina226 supports update_interval attribute as described in
>  Documentation/hwmon/sysfs-interface. Internally the interval is the sum of